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dc.contributor.authorCheng, Bo-Siaoen_US
dc.contributor.authorWu, Yun-Linen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorChen, Cheng-Hungen_US
dc.contributor.authorTu, Po-Minen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:29:51Z-
dc.date.available2014-12-08T15:29:51Z-
dc.date.issued2011-07-25en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3617418en_US
dc.identifier.urihttp://hdl.handle.net/11536/21405-
dc.description.abstractWe demonstrate a GaN-based high-Q microcavity light emitting diode (MCLED) with a buried AlN current aperture. A thin AlN layer is inserted on the InGaN/GaN multiple quantum wells as a current blocking layer and an optical confinement layer. The GaN-based MCLED is composed of a 29-pair GaN/AlN distributed Bragg reflector (DBR), an eight-pair of SiO(2)/Ta(2)O(5) dielectric DBR, and a three-lambda optical thickness InGaN/GaN active region. The current can be injected more effectively in the MCLED with a buried AlN current aperture. The output emission has a dominant emission peak wavelength at 440 nm with a very narrow linewidth of 0.52 nm, corresponding to a cavity Q-value of 846 at a driving current of 5 mA. (C) 2011 American Institute of Physics. [doi:10.1063/1.3617418]en_US
dc.language.isoen_USen_US
dc.titleHigh Q microcavity light emitting diodes with buried AlN current aperturesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3617418en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume99en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000293475500001-
dc.citation.woscount8-
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