標題: High Q microcavity light emitting diodes with buried AlN current apertures
作者: Cheng, Bo-Siao
Wu, Yun-Lin
Lu, Tien-Chang
Chiu, Ching-Hsueh
Chen, Cheng-Hung
Tu, Po-Min
Kuo, Hao-Chung
Wang, Shing-Chung
Chang, Chun-Yen
光電工程學系
Department of Photonics
公開日期: 25-七月-2011
摘要: We demonstrate a GaN-based high-Q microcavity light emitting diode (MCLED) with a buried AlN current aperture. A thin AlN layer is inserted on the InGaN/GaN multiple quantum wells as a current blocking layer and an optical confinement layer. The GaN-based MCLED is composed of a 29-pair GaN/AlN distributed Bragg reflector (DBR), an eight-pair of SiO(2)/Ta(2)O(5) dielectric DBR, and a three-lambda optical thickness InGaN/GaN active region. The current can be injected more effectively in the MCLED with a buried AlN current aperture. The output emission has a dominant emission peak wavelength at 440 nm with a very narrow linewidth of 0.52 nm, corresponding to a cavity Q-value of 846 at a driving current of 5 mA. (C) 2011 American Institute of Physics. [doi:10.1063/1.3617418]
URI: http://dx.doi.org/10.1063/1.3617418
http://hdl.handle.net/11536/21405
ISSN: 0003-6951
DOI: 10.1063/1.3617418
期刊: APPLIED PHYSICS LETTERS
Volume: 99
Issue: 4
結束頁: 
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