Title: Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate
Authors: Cheng, Stone
Chou, Po-Chien
Chieng, Wei-Hua
Chang, E. Y.
Department of Mechanical Engineering
Department of Materials Science and Engineering
Keywords: GaN HEMTs;Power electronics;Thermal management;Infrared (IR) thermography
Issue Date: 1-Mar-2013
Abstract: This work presents a technology for packaging AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. The GaN HEMTs are attached to a V-groove copper base and mounted on a TO-3P leadframe. The various thermal paths from the GaN gate junction to the case are carried out for heat dissipation by spreading to protective coating; transferring through the bond wires; spreading in the lateral device structure through the adhesive layer, and vertical heat spreading of silicon chip bottom. Thermal characterization showed a thermal resistance of 13.72 degrees C/W from the device to the TO-3P package. Experimental tests of a 30 mm gate-periphery single chip packaged in a 5 x 3 mm V-groove Cu base with a 100 V drain bias showed power dissipation of 22 W. (c) 2012 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.applthermaleng.2012.08.009
ISSN: 1359-4311
DOI: 10.1016/j.applthermaleng.2012.08.009
Volume: 51
Issue: 1-2
Begin Page: 20
End Page: 24
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