標題: Defects in semipolar (11(2)over-bar(2)over-bar) ZnO grown on (112) LaAlO3/(La, Sr) (Al, Ta)O-3 substrate by pulsed laser deposition
作者: Tian, Jr-Sheng
Wu, Yue-Han
Peng, Chun-Yen
Chiu, Kun-An
Shih, Yi-Sen
Do, Hien
Lin, Pei-Yin
Ho, Yen-Teng
Chu, Ying-Hao
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 27-Mar-2013
摘要: The microstructure of semipolar (11 (2) over bar(2) over bar) ZnO deposited on (112) LaAlO3/(La, Sr) (Al, Ta)O-3 was investigated by transmission electron microscopy. The ZnO shows an in-plane epitaxial relationship of [11 (2) over bar3](ZnO) parallel to [11 (1) over bar](LAO/LSAT) with oxygen-face sense polarity. The misfit strain along [11 (2) over bar3](ZnO) and [1 (1) over bar 00](ZnO) is relieved through the formation of misfit dislocations with the Burgers vectors b = 1/6[11 (2) over bar3](ZnO) and b = 1/3 < 1 (2) over bar 10 >(ZnO), respectively. The line defects in the semipolar ZnO are predominantly perfect dislocations, and the dislocation density decreases with increasing ZnO thickness as a result of dislocation reactions. Planar defects were observed to lie in the M-plane and extend along < 0001 >, whereas basal stacking faults were rarely found.
URI: http://dx.doi.org/10.1088/0953-8984/25/12/125801
http://hdl.handle.net/11536/21372
ISSN: 0953-8984
DOI: 10.1088/0953-8984/25/12/125801
期刊: JOURNAL OF PHYSICS-CONDENSED MATTER
Volume: 25
Issue: 12
結束頁: 
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