標題: Enhanced charge storage characteristics of nickel nanocrystals embedded flash memory structures
作者: Ray, Sounak K.
Panda, Debashis
Aluguri, Rakesh
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: non-volatile flash memory;nickel nanocrystals;PLD;electrical measurement;large memory
公開日期: 1-四月-2013
摘要: Nickel nanocrystals (NCs) embedded flash memory structure with SiO2 tunnelling and pulsed laser deposition grown Al2O3 blocking oxide is reported here. The post-deposition thermal annealing of an ultrathin (approximate to 5nm) nickel film evaporated on thermally grown SiO2 tunnelling barrier has been performed to form the nickel NCs. The formation of tiny nickel NCs is confirmed from the high-resolution transmission electron microscope micrographs. The electrical capacitancevoltage (CV) characteristics of the optimised 1000 degrees C, 5min annealed sample shows a large memory window of 20V at +/- 20V sweeping voltage. The charge storage properties are found to be significantly improved as compared to control samples. The frequency dependent CV measurements indicate the dominant charge trapping in Ni NCs, making the memory structure attractive for use in future nanoscale high-performance applications.
URI: http://dx.doi.org/10.1080/17458080.2012.708440
http://hdl.handle.net/11536/21363
ISSN: 1745-8080
DOI: 10.1080/17458080.2012.708440
期刊: JOURNAL OF EXPERIMENTAL NANOSCIENCE
Volume: 8
Issue: 3
起始頁: 389
結束頁: 395
顯示於類別:期刊論文


文件中的檔案:

  1. 000315675800019.pdf