標題: Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Location-Controlled Hydrothermal Method
作者: Yang, P. Y.
Wang, J. L.
Tsai, W. C.
Wang, S. J.
Chen, P. C.
Su, N. C.
Lin, J. C.
Lee, I. C.
Chang, C. T.
Wei, Y. C.
Cheng, H. C.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 mu m/10 mu m) demonstrated the higher field-effect mobility of 6.09 cm(2)/V.s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10(6), and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.
URI: http://hdl.handle.net/11536/21339
http://dx.doi.org/10.1149/1.3481257
ISBN: 978-1-60768-174-8
ISSN: 1938-5862
DOI: 10.1149/1.3481257
期刊: THIN FILM TRANSISTORS 10 (TFT 10)
Volume: 33
Issue: 5
起始頁: 345
結束頁: 353
Appears in Collections:Conferences Paper


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