標題: Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering
作者: Wang, Bau-Ming
Yang, Tzu-Ming
Wu, YewChung Sermon
Su, Chun-Jung
Lin, Horng-Chih
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2010
摘要: Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped alpha-Si/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.
URI: http://hdl.handle.net/11536/21335
http://dx.doi.org/10.1149/1.3481233
ISBN: 978-1-60768-174-8
ISSN: 1938-5862
DOI: 10.1149/1.3481233
期刊: THIN FILM TRANSISTORS 10 (TFT 10)
Volume: 33
Issue: 5
起始頁: 169
結束頁: 172
Appears in Collections:Conferences Paper


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