標題: Improved Electrical Performance of NILC Poly-Si TFTs Manufactured Using H2SO4 and HCl Solution
作者: Chen, Yu-Chung
Chao, Yu-Cheng
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2010
摘要: In this study, we fabricated a NILC surface on a SiO2-coated silicon wafer, and then used HCl solution and H2SO4 + H2O2 solution to do surface treatment. The treatment could reduce Ni or NiSi2 that was trapped at the surface of silicon and therefore the electrical characteristics of these devices were improved.
URI: http://hdl.handle.net/11536/21334
http://dx.doi.org/10.1149/1.3481232
ISBN: 978-1-60768-174-8
ISSN: 1938-5862
DOI: 10.1149/1.3481232
期刊: THIN FILM TRANSISTORS 10 (TFT 10)
Volume: 33
Issue: 5
起始頁: 165
結束頁: 168
顯示於類別:會議論文


文件中的檔案:

  1. 000315444100019.pdf