標題: Gap-Type a-Si TFTs for Backlight Sensing Application
作者: Tai, Ya-Hsiang
Chou, Lu-Sheng
Kuo, Yan-Fu
Yen, Shao-Wen
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Amorphous thin-film transistor (TFT);gap-type;light sensor;circuits
公開日期: 1-Aug-2011
摘要: In this paper, a new photo device are proposed using gap-typed hydrogenated amorphous silicon (a-Si: H) thin-film transistors (TFTs) as backlight sensing circuits. The system employs gap type a-Si TFTs, which has higher photo sensitivity, to sense illumination and increase device dynamic range. Meanwhile, the system with local dimming technologies could attain the purpose for self-adjusting function. It is expected that the integration of this sensing system onto the panel can be implemented without extra process development. Furthermore, the photo leakage characteristics of a-Si TFTs after optical stress are investigated and the corresponding calibration method is proposed to reduce the error in sensing the illumination intensity. This approach would provide the possibility for the sensors array to be integrated into the pixel with the same a-Si TFT device.
URI: http://dx.doi.org/10.1109/JDT.2011.2135838
http://hdl.handle.net/11536/21260
ISSN: 1551-319X
DOI: 10.1109/JDT.2011.2135838
期刊: JOURNAL OF DISPLAY TECHNOLOGY
Volume: 7
Issue: 8
起始頁: 420
結束頁: 425
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