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dc.contributor.authorChen, Che-Weien_US
dc.contributor.authorChung, Cheng-Tingen_US
dc.contributor.authorLin, Jyun-Chihen_US
dc.contributor.authorLuo, Guang-Lien_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.date.accessioned2014-12-08T15:29:33Z-
dc.date.available2014-12-08T15:29:33Z-
dc.date.issued2013-02-01en_US
dc.identifier.issn1882-0778en_US
dc.identifier.urihttp://dx.doi.org/10.7567/APEX.6.024001en_US
dc.identifier.urihttp://hdl.handle.net/11536/21251-
dc.description.abstractWe demonstrate the characteristics of p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunction diodes with a very high on/off ratio and very low leakage current using heteroepitaxial Ge grown directly on Si. The current ratio of p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunction is similar to 5 x 10(7) and similar to 3 x 10(6), respectively. The remarkably low off current density is 2.1 mu A/cm(2) for p(+)-Ge/n-Si and 19 mu A/cm(2) for n(+)-Ge/p-Si at a reverse bias of vertical bar V-R vertical bar = +/- 1 V, respectively. High on current density (125 A/cm(2) for p(+)-Ge/n-Si and 54 A/cm(2) for n(+)-Ge/p-Si) with a forward bias vertical bar V-F vertical bar = +/- 1 V is obtained with a GeO2 passivation and an Al2O3 isolation. (C) 2013 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleHigh On/Off Ratio and Very Low Leakage in p(+)/n and n(+)/p Germanium/Silicon Heterojunction Diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/APEX.6.024001en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.citation.volume6en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000314748200028-
dc.citation.woscount0-
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