標題: High On/Off Ratio and Very Low Leakage in p(+)/n and n(+)/p Germanium/Silicon Heterojunction Diodes
作者: Chen, Che-Wei
Chung, Cheng-Ting
Lin, Jyun-Chih
Luo, Guang-Li
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-二月-2013
摘要: We demonstrate the characteristics of p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunction diodes with a very high on/off ratio and very low leakage current using heteroepitaxial Ge grown directly on Si. The current ratio of p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunction is similar to 5 x 10(7) and similar to 3 x 10(6), respectively. The remarkably low off current density is 2.1 mu A/cm(2) for p(+)-Ge/n-Si and 19 mu A/cm(2) for n(+)-Ge/p-Si at a reverse bias of vertical bar V-R vertical bar = +/- 1 V, respectively. High on current density (125 A/cm(2) for p(+)-Ge/n-Si and 54 A/cm(2) for n(+)-Ge/p-Si) with a forward bias vertical bar V-F vertical bar = +/- 1 V is obtained with a GeO2 passivation and an Al2O3 isolation. (C) 2013 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.6.024001
http://hdl.handle.net/11536/21251
ISSN: 1882-0778
DOI: 10.7567/APEX.6.024001
期刊: APPLIED PHYSICS EXPRESS
Volume: 6
Issue: 2
結束頁: 
顯示於類別:期刊論文


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