標題: Large-Swing-Tolerant ESD Protection Circuit for Gigahertz Power Amplifier in a 65-nm CMOS Process
作者: Lin, Chun-Yu
Tsai, Shiang-Yu
Chu, Li-Wei
Ker, Ming-Dou
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: Electrostatic discharge (ESD);power amplifier (PA);radio-frequency (RF);silicon-controlled rectifier (SCR)
公開日期: 1-二月-2013
摘要: The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.
URI: http://dx.doi.org/10.1109/TMTT.2012.2231426
http://hdl.handle.net/11536/21242
ISSN: 0018-9480
DOI: 10.1109/TMTT.2012.2231426
期刊: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 61
Issue: 2
起始頁: 914
結束頁: 921
顯示於類別:期刊論文


文件中的檔案:

  1. 000314827300023.pdf