Title: Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching
Authors: Yu, Chia-Hui
Hsu, Heng-Tung
Chiang, Che-Yang
Kuo, Chien-I
Miyamoto, Yasuyuki
Chang, Edward Yi
Department of Materials Science and Engineering
Issue Date: 1-Feb-2013
Abstract: In this study, we present the fabrication and characterization of InGaSb/AlSb p-channel high-hole-mobility-transistor devices using inductively coupled plasma (ICP) etching with BCl3 gas. Devices fabricated by the dry etching technique show good DC and RF performances. Radio-frequency (RF) performance for devices with different source-to-drain spacing (L-SD) and gate length (L-g) were investigated. The fabricated 80-nm-gate-length p-channel device with 2-mu m LSD exhibited a maximum drain current of 86.2mA/mm with peak transconductance (g(m)) of 64.5mS/mm. The current gain cutoff frequency (f(T)) was measured to be 15.8 GHz when the device was biased at V-DS = -1.2 V and V-GS = 0.4 V. (C) 2013 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.52.020203
ISSN: 0021-4922
DOI: 10.7567/JJAP.52.020203
Volume: 52
Issue: 2
End Page: 
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