標題: Multilevel resistive switching memory with amorphous InGaZnO-based thin film
作者: Hsu, Ching-Hui
Fan, Yang-Shun
Liu, Po-Tsun
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 11-二月-2013
摘要: Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained by varying either the trigger voltage pulse or the compliance current. In addition, the RRAM devices exhibit superior characteristics of programming/erasing endurance and data retention for the application of multi-level nonvolatile memory technology. Physical transport mechanisms for the multi-level resistive switching characteristics are also deduced in this study. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792316]
URI: http://dx.doi.org/10.1063/1.4792316
http://hdl.handle.net/11536/21219
ISSN: 0003-6951
DOI: 10.1063/1.4792316
期刊: APPLIED PHYSICS LETTERS
Volume: 102
Issue: 6
結束頁: 
顯示於類別:期刊論文


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  1. 000315053300067.pdf