標題: Influence of structural anisotropy to anisotropic electron mobility in a-plane InN
作者: Ahn, H.
Chia, J. -W.
Lee, H. -M.
Gwo, S.
光電工程學系
Department of Photonics
公開日期: 11-二月-2013
摘要: This study reports on the anisotropic electron transport properties and a correlation between the electron mobility (mu) and the stacking faults (SFs) in the a-plane InN film. Electron mobilities measured by terahertz time-domain spectroscopy and Hall effect measurement along the in-plane [(1) over bar 100] (c(perpendicular to)) orientation were much higher than those of the in-plane [0001] (c(parallel to)) orientation. This result shows a sharp contrast to higher defect density for the c(perpendicular to) orientation as measured by x-ray diffraction. The electrons transporting through the planar SFs aligned along the c(perpendicular to) direction are expected to experience more scattering by defects, resulting in lower mu for the c(parallel to) orientation. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792209]
URI: http://dx.doi.org/10.1063/1.4792209
http://hdl.handle.net/11536/21218
ISSN: 0003-6951
DOI: 10.1063/1.4792209
期刊: APPLIED PHYSICS LETTERS
Volume: 102
Issue: 6
結束頁: 
顯示於類別:期刊論文


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  1. 000315053300023.pdf