標題: Bipolar switching characteristics of low-power Geo resistive memory
作者: Cheng, C. H.
Chen, P. C.
Liu, S. L.
Wu, T. L.
Hsu, H. H.
Chin, Albert
Yeh, F. S.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Resistive random access memory (RRAM);Germanium oxide (GeO(2))
公開日期: 1-八月-2011
摘要: We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO(x) dielectric. This cost-effective Ni/GeO(x)/TaN RRAM device has very small set power of 2 mu W, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 degrees C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM. (C) 2011 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2011.04.010
http://hdl.handle.net/11536/21216
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.04.010
期刊: SOLID-STATE ELECTRONICS
Volume: 62
Issue: 1
起始頁: 90
結束頁: 93
顯示於類別:期刊論文


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  1. 000292444000015.pdf