|標題:||Bipolar switching characteristics of low-power Geo resistive memory|
|作者:||Cheng, C. H.|
Chen, P. C.
Liu, S. L.
Wu, T. L.
Hsu, H. H.
Yeh, F. S.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||Resistive random access memory (RRAM);Germanium oxide (GeO(2))|
|摘要:||We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO(x) dielectric. This cost-effective Ni/GeO(x)/TaN RRAM device has very small set power of 2 mu W, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 degrees C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM. (C) 2011 Elsevier Ltd. All rights reserved.|
|Appears in Collections:||Articles|
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