標題: Using BCl3-Based Plasma to Modify Wet-Etching Pattern Sapphire Substrate for Improving the Growth of GaN-Based LEDs
作者: Lin, Bo-Wen
Niu, Chen-Yi
Hsieh, Cheng-Yu
Wang, Bau-Ming
Hsu, Wen-Ching
Lin, Ray-Ming
Wu, Yew Chung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: BCl3;light-emitting diode (LED);pattern;sapphire
公開日期: 15-二月-2013
摘要: Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl3-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.
URI: http://dx.doi.org/10.1109/LPT.2013.2238226
http://hdl.handle.net/11536/21215
ISSN: 1041-1135
DOI: 10.1109/LPT.2013.2238226
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 25
Issue: 4
起始頁: 371
結束頁: 373
顯示於類別:期刊論文


文件中的檔案:

  1. 000314684400015.pdf