Title: Using BCl3-Based Plasma to Modify Wet-Etching Pattern Sapphire Substrate for Improving the Growth of GaN-Based LEDs
Authors: Lin, Bo-Wen
Niu, Chen-Yi
Hsieh, Cheng-Yu
Wang, Bau-Ming
Hsu, Wen-Ching
Lin, Ray-Ming
Wu, Yew Chung Sermon
Department of Materials Science and Engineering
Keywords: BCl3;light-emitting diode (LED);pattern;sapphire
Issue Date: 15-Feb-2013
Abstract: Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl3-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.
URI: http://dx.doi.org/10.1109/LPT.2013.2238226
ISSN: 1041-1135
DOI: 10.1109/LPT.2013.2238226
Volume: 25
Issue: 4
Begin Page: 371
End Page: 373
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