標題: Bipolar resistive switching of chromium oxide for resistive random access memory
作者: Chen, Shih-Cheng
Chang, Ting-Chang
Chen, Shih-Yang
Chen, Chi-Wen
Chen, Shih-Ching
Sze, S. M.
Tsai, Ming-Jinn
Kao, Ming-Jer
Huang, Fon-Shan Yeh
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Cr(2)O(3) thin film;Resistance switching;Nonvolatile memory
公開日期: 1-Aug-2011
摘要: This study investigates the resistance switching characteristics of Cr(2)O(3)-based resistance random access memory (RRAM) with Pt/Cr(2)O(3)/TiN and Pt/Cr(2)O(3)/Pt structures. Only devices with Pt/Cr(2)O(3)/TiN structure exhibit bipolar switching behavior after the forming process because TiN was able to work as an effective oxygen reservoir but Pt was not. Oxygen migration between Cr(2)O(3) and TiN was observed clearly before and after resistance switching from Auger electron spectroscopy (AES) analysis. Both low resistance state, ON state, and high resistance state, OFF state, of Pt/Cr(2)O(3)/TiN structures are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 10(2), on top of that, the retention properties of both states are very stable after 10(4) s with a voltage of -0.2 V. (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2010.12.014
http://hdl.handle.net/11536/21205
ISSN: 0038-1101
DOI: 10.1016/j.sse.2010.12.014
期刊: SOLID-STATE ELECTRONICS
Volume: 62
Issue: 1
起始頁: 40
結束頁: 43
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