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dc.contributor.authorFu, Yi-Kengen_US
dc.contributor.authorLu, Yu-Hsuanen_US
dc.contributor.authorJiang, Ren-Haoen_US
dc.contributor.authorChen, Bo-Chunen_US
dc.contributor.authorFang, Yen-Hsiangen_US
dc.contributor.authorXuan, Rongen_US
dc.contributor.authorSu, Yan-Kuinen_US
dc.contributor.authorLin, Chia-Fengen_US
dc.contributor.authorChen, Jebb-Fangen_US
dc.date.accessioned2014-12-08T15:29:25Z-
dc.date.available2014-12-08T15:29:25Z-
dc.date.issued2011-08-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2011.04.018en_US
dc.identifier.urihttp://hdl.handle.net/11536/21194-
dc.description.abstractNear ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al(0.089)In(0.035)Ga(0.876)N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer. Crown Copyright (C) 2011 Published by Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectQuaternaryen_US
dc.subjectAlInGaNen_US
dc.subjectLight-emitting diodesen_US
dc.subjectPolarizationen_US
dc.subjectMetalorganic vapor phase epitaxyen_US
dc.titleEffect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2011.04.018en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume62en_US
dc.citation.issue1en_US
dc.citation.spage142en_US
dc.citation.epage145en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000292444000025-
dc.citation.woscount1-
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