標題: Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
作者: Fu, Yi-Keng
Lu, Yu-Hsuan
Jiang, Ren-Hao
Chen, Bo-Chun
Fang, Yen-Hsiang
Xuan, Rong
Su, Yan-Kuin
Lin, Chia-Feng
Chen, Jebb-Fang
電子物理學系
Department of Electrophysics
關鍵字: Quaternary;AlInGaN;Light-emitting diodes;Polarization;Metalorganic vapor phase epitaxy
公開日期: 1-八月-2011
摘要: Near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al(0.089)In(0.035)Ga(0.876)N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer. Crown Copyright (C) 2011 Published by Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2011.04.018
http://hdl.handle.net/11536/21194
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.04.018
期刊: SOLID-STATE ELECTRONICS
Volume: 62
Issue: 1
起始頁: 142
結束頁: 145
顯示於類別:期刊論文


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