標題: Power-Up Sequence Control for MTCMOS Designs
作者: Chen, Shi-Hao
Lin, Youn-Long
Chao, Mango C. -T.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Dynamic IR;inrush current;low power design;multi-threshold CMOS (MTCMOS);power gating;power-up sequence;ramp-up time
公開日期: 1-三月-2013
摘要: Power gating is effective for reducing standby leakage power asmulti-thresholdCMOS(MTCMOS) designs have become popular in the industry. However, a large inrush current and dynamic IR drop may occur when a circuit domain is powered up with MTCMOS switches. This could in turn lead to improper circuit operation. We propose a novel framework for generating a proper power-up sequence of the switches to control the inrush current of a power-gated domain while minimizing the power-up time and reducing the dynamic IR drop of the active domains. We also propose a configurable domino-delay circuit for implementing the sequence. Experimental results based on state-of-the-art industrial designs demonstrate the effectiveness of the proposed framework in limiting the inrush current, minimizing the power-up time, and reducing the dynamic IR drop. Results further confirm the efficiency of the framework in handling large-scale designs with more than 80 K power switches and 100 M transistors.
URI: http://dx.doi.org/10.1109/TVLSI.2012.2187689
http://hdl.handle.net/11536/21178
ISSN: 1063-8210
DOI: 10.1109/TVLSI.2012.2187689
期刊: IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
Volume: 21
Issue: 3
起始頁: 413
結束頁: 423
顯示於類別:期刊論文


文件中的檔案:

  1. 000315639900002.pdf