Full metadata record
DC FieldValueLanguage
dc.contributor.authorSyu, J. -S.en_US
dc.contributor.authorMeng, C. C.en_US
dc.contributor.authorYu, S. -W.en_US
dc.contributor.authorHuang, G. -W.en_US
dc.date.accessioned2014-12-08T15:29:21Z-
dc.date.available2014-12-08T15:29:21Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-60768-175-5en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/11536/21146-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3487565en_US
dc.description.abstractA 2.4/5.7-GHz dual-band dual-conversion low-IF downconverter is demonstrated using 0.35 mu m SiGe heterojunction bipolar transistor (HBT) technology. The first image signal is shifted away from the IF band by a complex Weaver architecture while the second image signal is eliminated by a complex Hartley architecture. The downconverter achieves a 45/44-dB image-rejection ratio of the first image (IRR1) and a 50/48-dB image-rejection ratio of the second image (IRR2) for 2.4/5.7-GHz modes, respectively, when IF frequency ranges from 20 to 40 MHz.en_US
dc.language.isoen_USen_US
dc.title2.4/5.7-GHz Dual-Band Dual-Conversion Low-IF Downconverter Using 0.35 mu m SiGe HBT Technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/1.3487565en_US
dc.identifier.journalSIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICESen_US
dc.citation.volume33en_US
dc.citation.issue6en_US
dc.citation.spage349en_US
dc.citation.epage353en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000314957600036-
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000314957600036.pdf