標題: 2.4/5.7-GHz Dual-Band Dual-Conversion Low-IF Downconverter Using 0.35 mu m SiGe HBT Technology
作者: Syu, J. -S.
Meng, C. C.
Yu, S. -W.
Huang, G. -W.
電機工程學系
Department of Electrical and Computer Engineering
公開日期: 2010
摘要: A 2.4/5.7-GHz dual-band dual-conversion low-IF downconverter is demonstrated using 0.35 mu m SiGe heterojunction bipolar transistor (HBT) technology. The first image signal is shifted away from the IF band by a complex Weaver architecture while the second image signal is eliminated by a complex Hartley architecture. The downconverter achieves a 45/44-dB image-rejection ratio of the first image (IRR1) and a 50/48-dB image-rejection ratio of the second image (IRR2) for 2.4/5.7-GHz modes, respectively, when IF frequency ranges from 20 to 40 MHz.
URI: http://hdl.handle.net/11536/21146
http://dx.doi.org/10.1149/1.3487565
ISBN: 978-1-60768-175-5
ISSN: 1938-5862
DOI: 10.1149/1.3487565
期刊: SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES
Volume: 33
Issue: 6
起始頁: 349
結束頁: 353
Appears in Collections:Conferences Paper


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