標題: Investigation of the (Cu, Ga) InSe2 thin film with different pairs of CuGa/In sputtered layers
作者: Hsu, Yu-Ting
Huang, Kai-Feng
Tsai, Shang-I
Lan, Wen-How
Yueh, Ming
Lin, Jia-Ching
Chang, Kuo-Jen
Lin, Wen-Jen
電子物理學系
Department of Electrophysics
關鍵字: CIGS;high mobility;sputter;solar cell
公開日期: 2012
摘要: Thin film samples of (Cu,Ga) InSe2 (CIGS) were prepared by DC magnetron sputtering and the selenisation process onto soda lime glass substrates. All samples had the same deposition conditions, and the optimal sputtering thickness of samples with one CuGa/In pair and two CuGa/In pairs are also the same. After sample deposition, X-ray diffraction (XRD), scanning electron microscope (SEM) and Hall effect measurements were used to characterize the properties of these samples. From XRD measurement results, excepting an extra small CuSe peak existing in the samples with two CuGa/In pairs, the XRD peaks of all samples are perfectly matched with the phase diagram of CuGa0.3In0.7Se2 material. It was also found that the grain sizes of the samples with one CuGa/In pair are larger than those with two CuGa/In pairs from SEM images. All these observations on samples with two CuGa/In pairs can be attributed to the fact that the less In incorporation in CIGS films, which it has been proven that the sample with low In-to-CuGa ratio has stronger CuSe peak from XRD result. Furthermore, the p-type carrier characteristics can be observed for all samples from Hall measurement results. The carrier mobility and concentration of the samples with one CuGa/In pair can be achieved as high as 15.28 cm(2)/Vs and as low as 1.50x10(16) cm(-3), respectively, while the carrier mobility and concentration of the ones with two CuGa/In pairs can be achieved as 6.4 cm(2)/Vs and 6.27x10(17) cm(-3), respectively. The results of superior electrical properties of samples with one CuGa/In pair agree well with the observations form XRD and SEM results. In the final, the optimal value of In-to-CuGa ratio during CuGa/In layers deposition in this study is 0.625.
URI: http://hdl.handle.net/11536/21145
http://dx.doi.org/10.1117/12.929712
ISBN: 978-0-8194-9187-9
ISSN: 0277-786X
DOI: 10.1117/12.929712
期刊: THIN FILM SOLAR TECHNOLOGY IV
Volume: 8470
顯示於類別:會議論文


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