標題: Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
作者: Ho, Szu-Han
Chang, Ting-Chang
Wu, Chi-Wei
Lo, Wen-Hung
Chen, Ching-En
Tsai, Jyun-Yu
Liu, Guan-Ru
Chen, Hua-Mao
Lu, Ying-Shin
Wang, Bin-Wei
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng-Tung
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 7-一月-2013
摘要: This Letter investigates a hump in gate current after negative-bias temperature-instability (NBTI) in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. Measuring gate current at initial through body floating and source/drain floating shows that hole current flows from source/drain. The fitting of gate current (I-g)-gate voltage (V-g) characteristic curves demonstrates that the Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after NBTI, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula Ehigh-k epsilon(high-k) = Q+E-sio2 epsilon(sio2). (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773479]
URI: http://dx.doi.org/10.1063/1.4773479
http://hdl.handle.net/11536/21053
ISSN: 0003-6951
DOI: 10.1063/1.4773479
期刊: APPLIED PHYSICS LETTERS
Volume: 102
Issue: 1
結束頁: 
顯示於類別:期刊論文


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  1. 000313646500061.pdf