標題: Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks
作者: Ho, Szu-Han
Chang, Ting-Chang
Wang, Bin-Wei
Lu, Ying-Shin
Lo, Wen-Hung
Chen, Ching-En
Tsai, Jyun-Yu
Chen, Hua-Mao
Liu, Guan-Ru
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng-Tung
Cao, Xi-Xin
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 7-一月-2013
摘要: This letter investigates extra traps measured by charge pumping technique in the high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks. N-V-high level characteristic curves with different duty ratios show that the hole discharge time (t(base level)) dominates the value of extra traps. By fitting ln (N (t(base level) = 1 mu s) -N (t(base level))) - Delta t(base level) at different temperatures and computing the equation t = tau(0) exp (alpha(h,SiO2)d(SiO2) + alpha(h,HfO2)d(HfO2,trap)), the results show that these extra traps measured by the charge pumping technique at high voltage zone can be attributed to high-k bulk shallow traps. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773914]
URI: http://dx.doi.org/10.1063/1.4773914
http://hdl.handle.net/11536/21052
ISSN: 0003-6951
DOI: 10.1063/1.4773914
期刊: APPLIED PHYSICS LETTERS
Volume: 102
Issue: 1
結束頁: 
顯示於類別:期刊論文


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  1. 000313646500064.pdf