Title: Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells
Authors: Chen, Cheng-Chang
Chiu, Ching-Hsueh
Chang, Shih-Pang
Shih, M. H.
Kuo, Ming-Yen
Huang, Ji-Kai
Kuo, Hao-Chung
Chen, Shih-Pu
Lee, Li-Ling
Jeng, Ming-Shan
Department of Photonics
Issue Date: 7-Jan-2013
Abstract: In this study, a multi-color emission was observed from the large-area GaN-based photonic quasicrystal (PQC) nanopillar laser. The GaN PQC nanostructure was fabricated on an n-GaN layer by using nanoimprint lithographic technology. The regrown InGaN/GaN multiple quantum wells (MQWs) formed a nanopyramid structure on top of the PQC nanopillars. A lasing action was observed at ultraviolet wavelengths with a low threshold power density of 24 mJ/cm(2), and a green color emission from InGaN/GaN MQWs was also achieved simultaneously. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775373]
URI: http://dx.doi.org/10.1063/1.4775373
ISSN: 0003-6951
DOI: 10.1063/1.4775373
Volume: 102
Issue: 1
End Page: 
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