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dc.contributor.authorPeng, Chun-Yenen_US
dc.contributor.authorTian, Jr-Shengen_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:29:12Z-
dc.date.available2014-12-08T15:29:12Z-
dc.date.issued2013-01-15en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2012.11.044en_US
dc.identifier.urihttp://hdl.handle.net/11536/21047-
dc.description.abstractIn this study, the morphology evolution of epitaxial a-plane ZnO on r-plane sapphire at low and high temperatures with growth by pulsed laser deposition (PLD) are presented. Examination of the surfaces of ZnO films during growth was done with in situ reflection high energy electron diffraction, and atomic force microscopy was used to examine the surface morphology of the corresponding films after growth. For initial growth, it was observed that (1 x 2) reconstruction on ZnO grown at 750 degrees C (HT-ZnO) occurred with step-flow growth, while ZnO grown at 450 degrees C (LT-ZnO) exhibited island growth mode. For thick films both HT- and LT-ZnO surfaces eventually develop into stripe morphology. Significant change of surface morphology during cooling had also been observed. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectZnOen_US
dc.subjectMorphologyen_US
dc.subjectEpitaxial growthen_US
dc.titleMorphology evolution of a-plane ZnO films on r-plane sapphire with growth by pulsed laser depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.apsusc.2012.11.044en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume265en_US
dc.citation.issueen_US
dc.citation.spage553en_US
dc.citation.epage557en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000312958500087-
dc.citation.woscount2-
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