標題: How tantalum proceeds phase change on tantalum nitride underlayer with sequential Ar plasma treatment
作者: Tsao, Jung-Chih
Liu, Chuan-Pu
Fang, Hsin-Chiao
Wang, Ying-Lang
光電學院
College of Photonics
關鍵字: Tantalum;Argon bombardment;TaN;Phase transformation
公開日期: 15-一月-2013
摘要: Tantalum can change its phase from high resistive beta-Ta to low resistive alpha-Ta phase on a TaN substrate with sequential Ar plasma treatment on the TaN layer surface prior to Ta deposition. The underlined mechanism of phase evolution is proposed based on systematic microstructure examination by high-resolution transmission electron microscopy. The images show that, with argon treatment, the upper part of the TaN film is transformed from amorphous-TaN to a composite phase of bcc-Ta(N) and amorphous-TaN mixture, which is also confirmed by X-ray diffraction patterns. The composite film composed of less nitrogen provides an ideal cubic matrix to confine the stable alpha-Ta phase to be grown. The alpha-Ta/bcc-Ta(N) film obtained by proper argon treatment results in film resistivity 10 times lower than the traditional Ta/TaN film. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.matchemphys.2012.09.053
http://hdl.handle.net/11536/21045
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2012.09.053
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 137
Issue: 3
起始頁: 689
結束頁: 693
顯示於類別:期刊論文


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