標題: The resistive switching characteristics in TaON films for nonvolatile memory applications
作者: Chen, Min-Chen
Chang, Ting-Chang
Chiu, Yi-Chieh
Chen, Shih-Cheng
Huang, Sheng-Yao
Chang, Kuan-Chang
Tsai, Tsung-Ming
Yang, Kai-Hsiang
Sze, Simon M.
Tsai, Ming-Jinn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Resistive switching;Nonvolatile memory;Tantalum oxynitride (TaON)
公開日期: 15-一月-2013
摘要: In this study, the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device based on sputter-deposited TaON thin film were investigated. The proposed memory device exhibits excellent resistance switching behavior with a high resistance state to low resistance state ratio of 2.5 order, write/erase endurance of about 1.5 order, and long retention time of 10(4) s at 85 degrees C. In addition, the device was investigated to achieve multilevel operation, which could increase storage density for next generation memory application. It was also found that the polarity of the forming process would not influence the resistive switching characteristic but would affect the first reset process behavior. The switching behavior could be regarded as the oxygen redox near the TiN interface. However, the first reset behavior of negative forming process was related to the oxygen concentration gradients near the Pt electrode and the Joule heating enhanced oxidation. (c) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2012.09.081
http://hdl.handle.net/11536/21044
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.09.081
期刊: THIN SOLID FILMS
Volume: 528
Issue: 
起始頁: 224
結束頁: 228
顯示於類別:期刊論文


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