標題: Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal-oxide-semiconductor-field-effect-transistors
作者: Lo, Wen-Hung
Chang, Ting-Chang
Dai, Chih-Hao
Chung, Wan-Lin
Chen, Ching-En
Ho, Szu-Han
Tsai, Jyun-Yu
Chen, Hua-Mao
Liu, Guan-Ru
Cheng, Osbert
Huang, Cheng-Tung
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: PD SOI;p-MOSFETs;GIFBE;NBTI;Strain
公開日期: 15-Jan-2013
摘要: This work investigates impact of mechanical strain on gate-induced-floating-body-effect (GIFBE) for partially depleted silicon-on-insulator p-type metal-oxide-semiconductor field effect transistors (PD SOI p-MOSFETs). First part, the original mechanism of GIFBE on PD SOI p-MOSFETs is studied. The experimental results indicate that GIFBE causes a reduction in oxide electric field (E-ox), resulting in an underestimate of negative-bias temperature instability (NBTI) degradation. This can be attributed to the electrons tunneling from the process-induced partial n(+) poly gate and anode electron injection (AEI) model, rather than the electron valence band tunneling (EVB) widely accepted as the mechanism for n-MOSFETs. And then, the second part shows that the strained FB device has less NBTI degradation than the unstrained devices. This behavior can be attributed to the fact that more electron accumulation was induced by strain-induced band gap narrowing, reducing NBTI significantly. (c) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2012.09.087
http://hdl.handle.net/11536/21041
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.09.087
期刊: THIN SOLID FILMS
Volume: 528
Issue: 
起始頁: 10
結束頁: 18
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