標題: Solution-Processed Vertical Organic Transistors Fabricated by Nanoimprint Lithography
作者: Wu, Yang-Kai
Huang, Jian-Hao
Tsai, Wu-Wei
Chen, Yung-Pin
Lin, Shih-Chieh
Hsu, Yung
Zan, Hsiao-Wen
Meng, Hsin-Fei
Wang, Lon A.
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
關鍵字: Interference lithography;nanoimprint;organic transistor;solution process;vertical transistor
公開日期: 1-二月-2013
摘要: In this letter, we demonstrate the first vertical-channel organic transistor using nanoimprint technology to produce a base electrode with high-density nanometer pores to well control the channel current vertically flowing through the pores. The aspect ratios of nanopores, which determine the switching performance of the vertical transistor, are greatly enhanced by transferring the nanostructure to the underlying layers. Without pore accumulation, a low leakage current can be achieved. The vertical transistor delivers an ON current of 0.35 mA/cm(2) and an ON/OFF current ratio of around 3000 at 1.8 V. The results prove the feasibility to produce low-voltage organic transistors over a large area with potentially low production cost.
URI: http://dx.doi.org/10.1109/LED.2012.2235402
http://hdl.handle.net/11536/21021
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2235402
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 2
起始頁: 313
結束頁: 315
顯示於類別:期刊論文


文件中的檔案:

  1. 000314173200055.pdf