標題: Metal-Gate/High-kappa/Ge nMOS at Small CET With Higher Mobility Than SiO2/Si at Wide Range Carrier Densities
作者: Liao, C. C.
Ku, T. C.
Lin, M. H.
Zeng, Lang
Kang, Jinfeng
Liu, Xiaoyan
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Annealing;Ge;high-kappa;laser;YbGe;(111)
公開日期: 1-二月-2013
摘要: High-performance TaN/TiLaO/La2O3/SiO2/(111)-Ge nMOSFETs show high mobility of 432 cm(2)/V . s at 10(13) cm(-2) carrier density (N-s), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO2/Si universal mobility at wide medium-high N-s range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO2 interfacial layer, and YbGex/n-Ge contact.
URI: http://dx.doi.org/10.1109/LED.2012.2230241
http://hdl.handle.net/11536/21019
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2230241
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 2
起始頁: 163
結束頁: 165
顯示於類別:期刊論文


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