標題: Fault Models and Test Methods for Subthreshold SRAMs
作者: Lin, Chen-Wei
Chen, Hung-Hsin
Yang, Hao-Yu
Huang, Chin-Yuan
Chao, Mango C. -T.
Huang, Rei-Fu
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
關鍵字: SRAM;subthreshold;sub-Vth;testing;stability fault;open defect
公開日期: 1-三月-2013
摘要: Due to the increasing demand of an extra-low-power system, a great amount of research effort has been spent in the past to develop an effective and economic subthreshold SRAM design. However, the test methods regarding those newly developed subthreshold SRAM designs have not yet been fully discussed. In this paper, we first categorize the subthreshold SRAM designs into three types, study the faulty behavior of open defects and address decoders faults on each type of designs, and then identify the faults which may not be covered by a traditional SRAM test method. We will also discuss the impact of open defects and threshold-voltage mismatch on sense amplifiers under subthreshold operations. A discussion about the temperature at test is also provided.
URI: http://dx.doi.org/10.1109/TC.2011.252
http://hdl.handle.net/11536/21006
ISSN: 0018-9340
DOI: 10.1109/TC.2011.252
期刊: IEEE TRANSACTIONS ON COMPUTERS
Volume: 62
Issue: 3
起始頁: 468
結束頁: 481
顯示於類別:期刊論文


文件中的檔案:

  1. 000314391600005.pdf