標題: Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics
作者: Chang, Chia-Hua
Shie, Tin-En
Lin, Yueh-Chin
Kakushima, K.
Iwai, H.
Lu, Po-Ching
Lin, Ting-Chun
Huang, Guan Ning
Chang, Edward Yi
交大名義發表
National Chiao Tung University
公開日期: 2010
摘要: Post deposition annealing is a critical process for the quality improvement of gate oxides on III-V MOS capacitors. Though high temperature annealing would effectively repair defects, it could also induce undesired electrical characteristics due to the crystallization of the gate oxide. In this work, we investigate the novel two steps annealing technique to improve the HfO2/In0.7Ga0.3As MOSCAP properties. The two steps process takes advantage of 1st high temperature annealing (550 degrees C) to improve the interface quality and 2nd low temperature annealing (450 degrees C) for curing bulk oxide without oxide crystallization. The two steps annealing technique greatly improves the HfO2/In0.7Ga0.3As properties as compared to single step process and is expected to be helpful for future III-V MOSFET development.
URI: http://hdl.handle.net/11536/20991
http://dx.doi.org/10.1149/1.3481636
ISBN: 978-1-60768-172-4
ISSN: 1938-5862
DOI: 10.1149/1.3481636
期刊: PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 8
Volume: 33
Issue: 3
起始頁: 473
結束頁: 478
Appears in Collections:Conferences Paper


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