標題: Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates
作者: Huang, Huei-Min
Ling, Shih-Chun
Chan, Wei-Wen
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: A-plane;InGaN/GaN multiple quantum wells;internal quantum efficiency;nanorod lateral epitaxial overgrowth
公開日期: 1-八月-2011
摘要: A-plane InGaN/GaN multiple-quantum wells (MQWs) were grown on a series of nanorod epitaxial lateral overgrowth (NRELOG) templates with varied nanorod depth. Optical properties of these samples were investigated by excitation power and temperature-dependent photoluminescence (PL). Due to the absence of quantum-confined Stark effect, the negligible PL emission peak shift and nearly identical power index for all samples were observed. In contrast to the as-grown MQWs, the thermal activation energy and internal quantum efficiency of NRELOG MQWs exhibit 1.6-fold and 4-fold increases, respectively, which are attributed to the improvement of crystal quality by NRELOG. Furthermore, the Shockley-Read-Hall nonradiative coefficient, determined from the fits of power-dependent PL quantum efficiency, is also apparently reduced while MQWs are grown on NRELOG GaN template. The results show the feasibility to fabricate high radiative efficiency a-plane devices via NRELOG.
URI: http://dx.doi.org/10.1109/JQE.2011.2158632
http://hdl.handle.net/11536/20971
ISSN: 0018-9197
DOI: 10.1109/JQE.2011.2158632
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 47
Issue: 8
起始頁: 1101
結束頁: 1106
顯示於類別:期刊論文


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  1. 000293415200002.pdf