Title: 0.35-MU-M PATTERN FABRICATION USING QUARTZ-ETCH ATTENUATE PHASE-SHIFTING MASK IN AN I-LINE STEPPER WITH A 0.50-NA AND A 0.60-SIGMA
Authors: LOONG, WA
SHY, SL
LIN, YC
交大名義發表
應用化學系
National Chiao Tung University
Department of Applied Chemistry
Issue Date: 1-Feb-1995
Abstract: A new method, namely, top critical dimension exposure-defocus tree (TCD E-D Tree), has been developed in this paper and used to analyze simulation results for quartz-etch attenuated phase-shifting mask (APSM). Simulation studies using Depict-3 (from TMA) on isolated and dense patterns indicate that numerical aperture (NA) 0.5 has greater depth of focus (DOF); NA 0.6 has larger exposure latitude (EL); best degree of coherence (sigma, sigma) value is between 0.6 approximately 0.7; best intensity transmittance (IT) range is 4 approximately 6%; the effect of mask bias on DOF and EL is rather small. The effect of sigma on space patterns including contact holes shows an inverse trend compared with lines. While conventional binary intensity mask (BIM) shows a 0.9 mum total DOF for dense line; APSM in our study (zero mask bias, 4% IT, 0.5 NA, 0.6 sigma) shows a 1.2 mum total DOF (30% improvement). The experimental results are highly in agreement with simulation. However, APSM shows only an insignificant improvement for EL in this study. Stepper with a NA of 0.5 and a sigma of 0.6 is very suitable for line, space and dense line/space pattern transfer using APSM in this study.
URI: http://dx.doi.org/10.1016/0167-9317(94)00106-5
http://hdl.handle.net/11536/2091
ISSN: 0167-9317
DOI: 10.1016/0167-9317(94)00106-5
Journal: MICROELECTRONIC ENGINEERING
Volume: 27
Issue: 1-4
Begin Page: 275
End Page: 278
Appears in Collections:Conferences Paper


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