標題: Stable Encapsulated Organic TFT With a Spin-Coated Poly(4-Vinylphenol-Co-Methyl Methacrylate) Dielectric
作者: Zan, Hsiao-Wen
Hsu, Ting-Yu
光電工程學系
Department of Photonics
關鍵字: Bias stress;pentacene;poly(4-vinylphenol-co-methyl methacrylate) (PVP-PMMA);reliability;thin-film transistor
公開日期: 1-八月-2011
摘要: The influences of encapsulation on the hysteresis and the gate-bias-stress effects (both positive and negative gate bias stresses) of pentacene organic thin-film transistors (OTFTs) with poly(4-vinylphenol) and poly(4-vinylphenol-co-methyl methacrylate) (PVP-PMMA) gate dielectrics are investigated. The encapsulation and the use of less polar gate dielectrics like PVP-PMMA copolymers are both important to suppress moisture adsorption and to obtain a stable pentacene OTFT. Compared to the air-stable OTFT with a fluoropolymer dielectric, the stable encapsulated OTFT with a PVP-PMMA dielectric is a low-cost promising candidate for mass production consideration.
URI: http://dx.doi.org/10.1109/LED.2011.2155026
http://hdl.handle.net/11536/20893
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2155026
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 8
起始頁: 1131
結束頁: 1133
顯示於類別:期刊論文


文件中的檔案:

  1. 000293710400046.pdf