Title: The Floating-Gate Non-Volatile Semiconductor Memory-From Invention to the Digital Age
Authors: Sze, S. M.
National Chiao Tung University
Keywords: Semiconductor Memory
Issue Date: 1-Oct-2012
Abstract: In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.
URI: http://dx.doi.org/10.1166/jnn.2012.6648
ISSN: 1533-4880
DOI: 10.1166/jnn.2012.6648
Volume: 12
Issue: 10
Begin Page: 7587
End Page: 7596
Appears in Collections:Articles