|標題:||Influence of Mg-containing precursor flow rate on the structural, electrical and mechanical properties of Mg-doped GaN thin films|
Jang, Jason S. -C.
Department of Electrophysics
|關鍵字:||Thin films;CVD;Hall effect;Nanoindentation|
|摘要:||The effects of Mg-containing precursor flow rate on the characteristics of the Mg-doped GaN (GaN:Mg) were systematically studied in this study. The GaN:Mg films were deposited on sapphire substrates by metal-organic chemical-vapor deposition (MOCVD) with various flow rates of 25, 50, 75 and 100 sccm of bis-(cyclopentadienyl)-magnesium (Cp2Mg) precursor. The structural, electrical and nanomechanical properties of GaN:Mg thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM). Hall measurement and nanoindentation techniques, respectively. Results indicated that GaN:Mg films obtained with 25 sccm Cp2Mg possess the highest hole concentration of 3.1 x 10(17) cm(-3). Moreover, the hardness and Young's modulus of GaN:Mg films measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option showed positive dependence with increasing flow rate of Cp2Mg precursor, presumably due to the solution hardening effect of Mg-doping. (C) 2012 Elsevier B.V. All rights reserved.|
|期刊:||MATERIALS CHEMISTRY AND PHYSICS|