標題: Influence of Mg-containing precursor flow rate on the structural, electrical and mechanical properties of Mg-doped GaN thin films
作者: Ke, Wen-Cheng
Jian, Sheng-Rui
Chen, I-Chen
Jang, Jason S. -C.
Chen, Wei-Kuo
Juang, Jenh-Yih
電子物理學系
Department of Electrophysics
關鍵字: Thin films;CVD;Hall effect;Nanoindentation
公開日期: 15-十月-2012
摘要: The effects of Mg-containing precursor flow rate on the characteristics of the Mg-doped GaN (GaN:Mg) were systematically studied in this study. The GaN:Mg films were deposited on sapphire substrates by metal-organic chemical-vapor deposition (MOCVD) with various flow rates of 25, 50, 75 and 100 sccm of bis-(cyclopentadienyl)-magnesium (Cp2Mg) precursor. The structural, electrical and nanomechanical properties of GaN:Mg thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM). Hall measurement and nanoindentation techniques, respectively. Results indicated that GaN:Mg films obtained with 25 sccm Cp2Mg possess the highest hole concentration of 3.1 x 10(17) cm(-3). Moreover, the hardness and Young's modulus of GaN:Mg films measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option showed positive dependence with increasing flow rate of Cp2Mg precursor, presumably due to the solution hardening effect of Mg-doping. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.matchemphys.2012.07.060
http://hdl.handle.net/11536/20888
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2012.07.060
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 136
Issue: 2-3
起始頁: 796
結束頁: 801
顯示於類別:期刊論文


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