|標題:||Effect of processing kinetics on the structure of ferromagnetic-ferroelectric-ferromagnetic interfaces|
|作者:||Krishnan, P. S. Sankara Rama|
Ramasse, Q. M.
Department of Materials Science and Engineering
|摘要:||Trilayer heterostructures consisting of a ferroelectric bismuth ferrite (BFO) film sandwiched between ferromagnetic lanthanum strontium manganese oxide (LSMO) films were fabricated using pulsed laser deposition. Both BFO thicknesses (20 nm, 5 nm) and cooling rates were varied to investigate the role of processing parameters on the chemistry of the interfaces. The interfaces were investigated using a dedicated aberration corrected scanning transmission electron microscope (STEM) operated at 100 kV via STEM-high angle annular dark field (STEM-HAADF) and STEM-electron energy loss spectroscopy (STEM-EELS) modes. Combined analysis through STEM-HAADF and STEM-EELS revealed the formation of lattice distortion in certain regions of the BFO layer for the similar to 5 nm film. Piezoresponse force microscopy (PFM) studies of the similar to 5 nm BFO sample revealed weak ferroelectric domain switching. Stacking fault defects with mixed valence manganese (Mn-B site cation) were formed in the top LSMO layer when the heterostructure was cooled at a slower rate irrespective of BFO thickness, thereby demonstrating the effect of processing kinetics on the physical integrity of the heterostructure. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4765045]|
|期刊:||JOURNAL OF APPLIED PHYSICS|