標題: Effect of processing kinetics on the structure of ferromagnetic-ferroelectric-ferromagnetic interfaces
作者: Krishnan, P. S. Sankara Rama
Ramasse, Q. M.
Liang, Wen-I
Chu, Ying-Hao
Nagarajan, V.
Munroe, P.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 15-十一月-2012
摘要: Trilayer heterostructures consisting of a ferroelectric bismuth ferrite (BFO) film sandwiched between ferromagnetic lanthanum strontium manganese oxide (LSMO) films were fabricated using pulsed laser deposition. Both BFO thicknesses (20 nm, 5 nm) and cooling rates were varied to investigate the role of processing parameters on the chemistry of the interfaces. The interfaces were investigated using a dedicated aberration corrected scanning transmission electron microscope (STEM) operated at 100 kV via STEM-high angle annular dark field (STEM-HAADF) and STEM-electron energy loss spectroscopy (STEM-EELS) modes. Combined analysis through STEM-HAADF and STEM-EELS revealed the formation of lattice distortion in certain regions of the BFO layer for the similar to 5 nm film. Piezoresponse force microscopy (PFM) studies of the similar to 5 nm BFO sample revealed weak ferroelectric domain switching. Stacking fault defects with mixed valence manganese (Mn-B site cation) were formed in the top LSMO layer when the heterostructure was cooled at a slower rate irrespective of BFO thickness, thereby demonstrating the effect of processing kinetics on the physical integrity of the heterostructure. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4765045]
URI: http://dx.doi.org/10.1063/1.4765045
http://hdl.handle.net/11536/20879
ISSN: 0021-8979
DOI: 10.1063/1.4765045
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 112
Issue: 10
結束頁: 
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