標題: Ohmic contact on n-type Ge using Yb-germanide
作者: Zheng, Zhi-Wei
Ku, Teng-Chieh
Liu, Ming
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 26-十一月-2012
摘要: Poor ohmic contact by Fermi-level pinning to valence band (EV) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 degrees C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768700]
URI: http://dx.doi.org/10.1063/1.4768700
http://hdl.handle.net/11536/20873
ISSN: 0003-6951
DOI: 10.1063/1.4768700
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 22
結束頁: 
顯示於類別:期刊論文


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