標題: Low-temperature grown graphene films by using molecular beam epitaxy
作者: Lin, Meng-Yu
Guo, Wei-Ching
Wu, Meng-Hsun
Wang, Pro-Yao
Liu, Te-Huan
Pao, Chun-Wei
Chang, Chien-Cheng
Lee, Si-Chen
Lin, Shih-Yen
光電學院
College of Photonics
公開日期: 26-Nov-2012
摘要: Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 degrees C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768948]
URI: http://dx.doi.org/10.1063/1.4768948
http://hdl.handle.net/11536/20872
ISSN: 0003-6951
DOI: 10.1063/1.4768948
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 22
結束頁: 
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