標題: ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS WITH DOUBLE-ACTIVE-LAYER STRUCTURE
作者: TSAI, MJ
WANG, PW
SU, HP
CHENG, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: THIN-FILM TRANSISTORS (TFTS);DOUBLE-ACTIVE-LAYER STRUCTURE;DOUBLE-SWITCHING CHARACTERISTICS;MULTIPLE-VALUED LOGIC
公開日期: 1-二月-1995
摘要: Thin-film transistors (TFTs) with a doubie-active-layer (DAL) structure have been proposed and found to exhibit two kinds of special electrical characteristics. One is the improvement of current drivability and transconductance as compared to the traditional structure. The other is the double-switching characteristics caused by the bi-transistor action. By means of a buried oxide separating the conduction channel into two parts, carrier transport could be enhanced due to the reduction of the vertical electric Field. In addition, the weak avalanche breakdown for the top channel results in hole accumulation in the top poly-Si/buried oxide interface, further promoting the conduction of the bottom active layer, leading to the novel double-switching properties.
URI: http://dx.doi.org/10.1143/JJAP.34.470
http://hdl.handle.net/11536/2087
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.470
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 2A
起始頁: 470
結束頁: 475
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RC61500012.pdf