Title: The suppressed negative bias illumination-induced instability in In-Ga-Zn-O thin film transistors with fringe field structure
Authors: Chen, Yu-Chun
Chang, Ting-Chang
Li, Hung-Wei
Hsieh, Tien-Yu
Chen, Te-Chih
Wu, Chang-Pei
Chou, Cheng-Hsu
Chung, Wang-Cheng
Chang, Jung-Fang
Tai, Ya-Hsiang
光電工程學系
Department of Photonics
Issue Date: 26-Nov-2012
Abstract: This study investigates the suppressed negative gate bias illumination stress (NBIS) -induced instability of via-type amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) with fringe field (FF) structures. The less negative threshold voltage shifts of devices after NBIS are showed when device has larger FF structures. This finding is attributed to more dispersive distribution of photo-generated holes in the width direction of a-IGZO during NBIS, which reduce the hole trapping phenomenon in the front channel interface. The a-IGZO TFT with FF structure is expected to be an effective method to increase the electrical reliability of devices after NBIS. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767996]
URI: http://dx.doi.org/10.1063/1.4767996
http://hdl.handle.net/11536/20869
ISSN: 0003-6951
DOI: 10.1063/1.4767996
Journal: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 22
End Page: 
Appears in Collections:Articles


Files in This Item:

  1. 000311967000082.pdf