標題: CONTROL OF AS PRECIPITATION IN LOW-TEMPERATURE GAAS BY ELECTRONIC AND ISOELECTRONIC DELTA-DOPING
作者: CHENG, TM
CHANG, CY
HUANG, JH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: LOW-TEMPERATURE GAAS;AS PRECIPITATE;MOLECULAR BEAM EPITAXY;TRANSMISSION ELECTRON MICROSCOPY
公開日期: 1-Feb-1995
摘要: A systematic study of electronic (Si and Be) and isoelectronic (In and Al) delta-doping effects on the formation of arsenic precipitates in GaAs grown by molecular beam epitaxy (MBE) at low substrate temperature is presented. Both electronic dopant Si and isoelectronic dopant In are found to accumulate As precipitates in postgrowth-annealed samples, while the precipitate accumulation effect is more prominent for Si than In. As precipitate is depleted from regions doped with Be or Al. The results suggest that the electronic property of impurity does not have a direct correlation with the As precipitation process. The effects of doping concentration and postgrowth annealing temperatures are also reported. The ability to control the As precipitates in low-temperature materials should lead to a wide variety of device applications.
URI: http://dx.doi.org/10.1143/JJAP.34.1185
http://hdl.handle.net/11536/2086
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.1185
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 2B
起始頁: 1185
結束頁: 1189
Appears in Collections:Conferences Paper


Files in This Item:

  1. A1995RF65900105.pdf