Title: On-Current Decrease After Erasing Operation in the Nonvolatile Memory Device With LDD Structure
Authors: Chang, Geng-Wei
Chang, Ting-Chang
Syu, Yong-En
Tai, Ya-Hsiang
Jian, Fu-Yen
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Keywords: Lightly doped drain (LDD);nonvolatile memory;on-current decrease;silicon-oxide-nitride-oxide-silicon thin-film transistor (SONOS TFT)
Issue Date: 1-Aug-2011
Abstract: The on-current decrease phenomenon is observed after erasing operation in the silicon-oxide-nitride-oxide-silicon thin-film transistors (TFTs) with lightly doped drain (LDD) structure. As nonvolatile memory, when the TFT is programmed again, the on-current decrease phenomenon can be recovered. The on-current decrease and recovery are explained by the energy band diagrams at different drain biases. The explanation implies that this phenomenon only appears in the device with LDD structure, but not in the device without LDD structure, which is experimentally verified.
URI: http://dx.doi.org/10.1109/LED.2011.2158182
http://hdl.handle.net/11536/20849
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2158182
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 8
Begin Page: 1038
End Page: 1040
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