標題: Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks
作者: Lin, Da-Wei
Lee, Chia-Yu
Liu, Che-Yu
Han, Hau-Vei
Lan, Yu-Pin
Lin, Chien-Chung
Chi, Gou-Chung
Kuo, Hao-Chung
光電系統研究所
光電工程學系
Institute of Photonic System
Department of Photonics
公開日期: 3-十二月-2012
摘要: This study presents the green InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) grown on a GaN nanorods template with SiO2 nanomasks by metal-organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth, microscale air voids were formed between nanorods and the threading dislocations were efficiently suppressed. The electroluminescence measurement reveals that the LEDs on nanorods template with SiO2 nanomasks suffer less quantum-confined Stark effect and exhibit higher light output power and lower efficiency droop at a high injection current as compared with conventional LEDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768950]
URI: http://dx.doi.org/10.1063/1.4768950
http://hdl.handle.net/11536/20842
ISSN: 0003-6951
DOI: 10.1063/1.4768950
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 23
結束頁: 
顯示於類別:期刊論文


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  1. 000312243900062.pdf