標題: Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
作者: Ho, Szu-Han
Chang, Ting-Chang
Lu, Ying-shin
Lo, Wen-Hung
Chen, Ching-En
Tsai, Jyun-Yu
Chen, Hua-Mao
Wu, Chi-Wei
Luo, Hung-Ping
Liu, Guan-Ru
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng-Tung
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 3-十二月-2012
摘要: This letter investigates anomalous traps measured by charge pumping technique in high voltage in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors. N-V-high level characteristic curves with different duty ratios indicate that the electron discharge time dominates the value of N for extra traps. By fitting ln (N (t(base level) = 2.5 mu s)-N (t(base level)))-Delta t(base level) at different temperatures and computing the equation t = tau(0) exp (alpha(e,SiO2)d(SiO2) + alpha(e,HfO2)d(HfO2,trap)), results show that these extra traps measured by the charge pumping technique at high voltage can be attributed to high-k bulk shallow traps. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769444]
URI: http://dx.doi.org/10.1063/1.4769444
http://hdl.handle.net/11536/20841
ISSN: 0003-6951
DOI: 10.1063/1.4769444
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 23
結束頁: 
顯示於類別:期刊論文


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  1. 000312243900090.pdf