|Title:||Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
|Abstract:||This letter investigates anomalous traps measured by charge pumping technique in high voltage in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors. N-V-high level characteristic curves with different duty ratios indicate that the electron discharge time dominates the value of N for extra traps. By fitting ln (N (t(base level) = 2.5 mu s)-N (t(base level)))-Delta t(base level) at different temperatures and computing the equation t = tau(0) exp (alpha(e,SiO2)d(SiO2) + alpha(e,HfO2)d(HfO2,trap)), results show that these extra traps measured by the charge pumping technique at high voltage can be attributed to high-k bulk shallow traps. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769444]|
|Journal:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
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