標題: EFFECTS OF LOW-TEMPERATURE-GROWN GAAS LAYER ON COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES
作者: TSANG, JS
LEE, CP
FAN, JC
LEE, SH
TSAI, KL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: LT-GAAS;COMPOSITIONAL DISORDERING;SUPERLATTICE;PHOTOLUMINESCENCE
公開日期: 1-二月-1995
摘要: Effects of thickness and position of the low-temperature-grown GaAs (LT-GaAs) layer on the compositional disordering of AlGaAs/GaAs superlattice have been studied. Samples with a top LT-GaAs layer or a bottom LT-GaAs layer have been studied with various annealing conditions. It was found that the LT-GaAs layer grown on top of the superlattice is more effective in causing disordering than the LT-GaAs layer grown at the bottom. The amount of disordering increases with the thickness of the LT-GaAs layer. A selective disordering process has been developed using a patterned LT-GaAs cap layer. This disordering technique is very simple and can be easily applied to device fabrication.
URI: http://dx.doi.org/10.1143/JJAP.34.1089
http://hdl.handle.net/11536/2084
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.1089
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 2B
起始頁: 1089
結束頁: 1093
顯示於類別:會議論文


文件中的檔案:

  1. A1995RF65900084.pdf